Low temperature Al based wafer bonding using Sn as intermediate layer

Author

Zhiyuan Zhu ; Min Yu ; Yingwei Zhu ; Peiquan Wang ; Chenchen Liu ; Wei Wang ; Min Miao ; Jing Chen ; Yufeng Jin

Author_Institution

Nat. Key Lab. of Nano/Micro Fabrication Technol., Peking Univ., Beijing, China

fYear

2012

fDate

13-16 Aug. 2012

Firstpage

127

Lastpage

130

Abstract

Metallic wafer bonding is today becoming a key enable technology in MEMS packaging and heterogeneous integration. The Si/Al/Sn-Sn/Al/Si bonding structure with low temperature, low pressure and short bonding time is investigated in this paper. The bonded 4 inch Si wafers were diced into dies. Scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDS) were applied for interface analysis. The shear strength was 3.1 to 5.7 MPa for the diced dies. The fracture surface study and cross section analysis were conducted and the bond mechanism was also investigated.

Keywords

X-ray spectroscopy; aluminium compounds; electronics packaging; fracture; microassembling; micromechanical devices; pressure; scanning electron microscopy; shear strength; silicon compounds; tin compounds; wafer bonding; EDS; MEMS packaging; SEM; Si-Al-Sn; Sn-Al-Si; bond mechanism; bonding structure; bonding time; cross section analysis; diced dies; energy dispersive X-ray spectroscopy; fracture surface; heterogeneous integration; interface analysis; intermediate layer; low temperature wafer bonding; metallic wafer bonding; pressure; scanning electron microscopy; shear strength; Bonding; Micromechanical devices; Silicon; Substrates; Surface morphology; Tin; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Packaging Technology and High Density Packaging (ICEPT-HDP), 2012 13th International Conference on

Conference_Location

Guilin

Print_ISBN

978-1-4673-1682-8

Electronic_ISBN

978-1-4673-1680-4

Type

conf

DOI

10.1109/ICEPT-HDP.2012.6474584

Filename

6474584