Title :
High precision large signal modeling of microwave PHEMT transistors
Author :
Mima, J.P. ; Huang, Bo ; Johnson, J. ; Branner, G.R.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Davis, CA, USA
Abstract :
This paper presents the steps leading to development of a highly accurate PHEMT circuit model primarily for accurate prediction of DC, small and large signal microwave performance. This model characterizes the fundamental and higher order harmonic performance over a broad range of input power with a high degree of accuracy
Keywords :
equivalent circuits; high electron mobility transistors; microwave field effect transistors; semiconductor device models; PHEMT circuit model; fundamental performance; high precision large signal modeling; higher order harmonic performance; large signal microwave performance; microwave PHEMT; microwave transistors; pseudomorphic HEMT; Electronic mail; Gallium arsenide; HEMTs; MESFETs; MODFETs; Microwave circuits; Microwave transistors; PHEMTs; Power system harmonics; Predictive models;
Conference_Titel :
Circuits and Systems, 2000. Proceedings of the 43rd IEEE Midwest Symposium on
Conference_Location :
Lansing, MI
Print_ISBN :
0-7803-6475-9
DOI :
10.1109/MWSCAS.2000.951580
