Oscillation efficiency of transfer electrons nitrid diodes

The basic criteria of perspective of using of intervalley electron transfer (IET) semiconductor materials for a generation, amplifier and frequency multiplication are oscillation efficiency and frequency operation range. The most effective operation mode is idealized LSE mode. Thus, it is possible to be able to estimate perspective of one or another semiconductor compound for fabrication IET - devise (TED) in the frequencies range by analyzing LSE mode. Such analysis is below conducted for nitride compound (AlN, GaN, InN) and other. We will consider velocity-field characteristic on frequencies on which the inertance of redistribution of electrons does not yet show up between the valleys of conductivity zone of the examined compound.