Negative differential conductivity of semiconductor diode with resonance-tunnel border

A number of semiconductor devices possess negative differential conductivity(NDC). In basis their works are tunneling, resonance tunneling, electrons capture on recombination centers or transfer of electrons in the overhead on energy of valley of conductivity zone and other. The authors propose here a novel diode, in which the NDC arise between ohmic contacts due to tunneling or resonance tunneling of electrons through the lateral scopes of diode. The current voltage characteristic of the diodes are determined.