Title :
A quantum approach to nanocrystal nonvolatile memory
Author :
Wang, Pei-Yu ; Tsui, Bing-Yue
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan
Abstract :
This work establishes an accurate 3D physical model with quantum approach to analyze the small size nanocrystal (NC) nonvolatile memory. The basic memory performance, programming and erasing, is studied in detail. The trapping efficiency, Coulomb blockade and quantum confinement are the main factors affecting the memory performance. Tradeoff between these factors exists on the selection of NC size. The simulation results are also in agreement with other general experiment studies qualitatively.
Keywords :
Coulomb blockade; nanostructured materials; random-access storage; 3D physical model; Coulomb blockade; quantum approach; quantum confinement; small size nanocrystal nonvolatile memory; trapping efficiency; Electric fields; Energy states; Nonvolatile memory; Potential well; Programming; Three dimensional displays; Tunneling;
Conference_Titel :
VLSI Technology, Systems and Applications (VLSI-TSA), 2011 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4244-8493-5
DOI :
10.1109/VTSA.2011.5872273
