The optimization of poly-Si cells

Author

Kim, S.S. ; Lim, D.G. ; Kim, H.W. ; Yi, J.

Author_Institution

Dept. of Electr. Eng., Kyun Kwan Univ., Kyunggi, South Korea

Volume

2

fYear

1997

fDate

25 -30 May 1997

Firstpage

642

Abstract

We investigated the optimization of poly-Si solar cell characteristics for various factors. The influencing factors were investigated in terms of emitter thickness, thermal treatment, surface treatment, grid design, and contact metal. First, we carried out solar cell simulation using a PC1D software package. Then poly-Si solar cells were fabricated and characterized in terms of structural, electrical, and optical properties. Pretreatment temperature of 900°C, chemical surface polishing of poly-Si substrate, emitter thickness of 0.43 μm, top Yb metal, and grid finger shading area of 7% gave an improved conversion efficiency of poly-Si solar cell

Keywords

digital simulation; elemental semiconductors; polishing; semiconductor device testing; silicon; solar cells; 0.43 micron; 900 degC; PC1D software package; Si; chemical surface polishing; conversion efficiency; emitter thickness; grid design; grid finger shading area; polysilicon solar cells; pretreatment temperature; solar cell simulation; surface treatment; thermal treatment; Charge carrier lifetime; Chemicals; Conductivity; Costs; Doping; Gettering; Grain boundaries; Passivation; Photovoltaic cells; Surface treatment;

fLanguage

English

Publisher

ieee

Conference_Titel

Properties and Applications of Dielectric Materials, 1997., Proceedings of the 5th International Conference on

Conference_Location

Seoul

Print_ISBN

0-7803-2651-2

Type

conf

DOI

10.1109/ICPADM.1997.616517

Filename

616517