Title :
Low-temperature sintering of nanoscale silver paste for double-sided attaching 9×9 mm2 chip
Author :
Jiaoyuan Lian ; Yunhui Mei ; Xu Chen ; Xin Li ; Gang Chen ; Keqin Zhou
Author_Institution :
Sch. of Chem. Eng. & Technol., Tianjin Univ., Tianjin, China
Abstract :
In this article, nanoscale silver paste was used to double-sided attach Insulated Gate Bipiloar Transistor (IGBT) chips. In order to obtain high bonding strength in double-sided sintered assembly, sintering process of nanoscale silver paste was studied by orthogonal experiment. The shear strength of double-sided sintered joint was analyzed with different factors, e.g., temperature, of sintering process. Die-shearing tests revealed that shear strength of larger than 20 MPa was generated when nanoscale silver was firstly pre-dried at 70°C for 10 mins, secondly heated immediately at 225°C with the help of 3.9-5.1 MPa for 10 mins, and eventually sintered at 300°C for 10 mins. Furthermore, significant plastic flow was observed by Scanning Electronic Microscopy (SEM) in the sheared silver joint which showed relatively high bonding strength.
Keywords :
assembling; bonding processes; insulated gate bipolar transistors; plastic flow; scanning electron microscopy; shear strength; sintering; SEM; bonding strength; die-shearing tests; double-sided attach IGBT chips; double-sided sintered assembly; double-sided sintered joint; insulated gate bipiloar transistor; low-temperature sintering; nanoscale silver paste; plastic flow; pressure 3.9 MPa to 5.1 MPa; scanning electronic microscopy; shear strength; size 9 mm; temperature 225 C; temperature 300 C; temperature 70 C; time 10 min; Abstracts; Fabrication; Insulated gate bipolar transistors; Joints; Nanoscale devices; Pressing; Silver;
Conference_Titel :
Electronic Packaging Technology and High Density Packaging (ICEPT-HDP), 2012 13th International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4673-1682-8
Electronic_ISBN :
978-1-4673-1680-4
DOI :
10.1109/ICEPT-HDP.2012.6474608
