DocumentCode
3502386
Title
Magnetoresistance of two-barrier magnetic tunnel junctions
Author
Beletskii, N.N. ; Borysenko, S.A.
Author_Institution
Usikov Inst. of Radiophys. & Electron., Nat. Acad. of Sci. of Ukraine, Kharkov, Ukraine
fYear
2010
fDate
21-26 June 2010
Firstpage
1
Lastpage
3
Abstract
In this paper the theoretical investigation of giant tunnel magnetoresistance effect in the two-barrier magnetic tunnel junctions has been carried out. We assume that emitter and collector are ferromagnetic whereas two barriers and middle part of the two-barrier magnetic tunnel junctions consist of dielectrics. We use the two-band model of free electrons in ferromagnetic electrodes.
Keywords
band model of magnetism; ferromagnetic materials; giant magnetoresistance; tunnelling magnetoresistance; ferromagnetic electrode; free electrons; giant tunnel magnetoresistance effect; magnetic tunnel junctions; two-band model; Electric potential; Electrodes; Iron; Junctions; Magnetic tunneling; Tunneling magnetoresistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Physics and Engineering of Microwaves, Millimeter and Submillimeter Waves (MSMW), 2010 International Kharkov Symposium on
Conference_Location
Kharkiv
Print_ISBN
978-1-4244-7900-9
Type
conf
DOI
10.1109/MSMW.2010.5546173
Filename
5546173
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