The dispersion of waves in the semiconductor composite structure and heterojunction with the 2-D electronic gas

The electron-wave interactions in the composite periodic semiconductors has been investigated. The dependencies for the films of the InSb. structures has been shown. The dispersion of waves in the space-periodic structure with the 2-dimentional electronic gas has been investigated. We consider the electron-wave interactions in the distributed semiconductors structure. The key element of the electrodynamic model of the system under study is a semiconductor film of thickness h and a periodic structure placed at distance b from the film (l is the period of the structure, and d is the distance between its elements) (Figure a-h). The semiconductor is subjected to applied longitudinal electric and magnetic fields. The system is in the nonequilibrium state, therefore, the disturbances of the space charge arising in the semiconductor propagate in the form of electrokinetic waves, which, in turn, are transformed into electromagnetic radiation. A certain part of this radiation reflected from the interfaces interacts with charge carriers, etc. The reflecting screens can be made of a superconductor (a film or a layered composite structure is possible). The superconductor is described within the framework of a two-fluid Gorter-Casimir model. In the electrodynamic structure under study, the fields should meet the following requirements: the Helmholtz equation, the Floquet condition, condition radiation the finiteness condition for the energy integral, the condition on the ideal metal, the continuity condition for the field at the boundary of dielectric and plasma media, and the impedance boundary condition.