DocumentCode
3503149
Title
Investigation of competitive adsorption between accelerator and suppressor in TSV copper electroplating
Author
Yue Lu ; Haiyong Cao ; Qi Sun ; Huiqin Ling ; Ming Li ; Jiangyan Sun
Author_Institution
Inst. of Microelectron. Mater. & Technol., Shanghai Jiao Tong Univ., Shanghai, China
fYear
2012
fDate
13-16 Aug. 2012
Firstpage
434
Lastpage
437
Abstract
In TSV copper electroplating, the goal is to achieve superfilling deposition. In order to reach the bottom-up in TSV copper electroplating, some additives (accelerator suppressor and leveler) are added into the electroplating bath. To know the relationship between additives in the plating solution is very important. In the present work, by means of linear sweep voltammetry (LSV) and cyclic voltammogram (CV), it is found that there is a competition between the accelerator and the suppressor. At the less negative potential, the accelerator shows a strong adsorption property, and the suppressor plays its role in the relatively more negative potential area, which shows a competitive adsorption relationship between the accelerator and the suppressor during the process of bottom-up filling.
Keywords
adsorption; copper; electroplating; integrated circuit packaging; surge protection; three-dimensional integrated circuits; voltammetry (chemical analysis); CV; Cu; LSV; TSV copper electroplating; accelerator; adsorption property; bottom-up filling process; competitive adsorption relationship; cyclic voltammogram; electroplating bath; linear sweep voltammetry; plating solution; super-filling deposition; suppressor; Additives; Adsorption; Copper; Electric potential; Filling; Packaging; Through-silicon vias;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Packaging Technology and High Density Packaging (ICEPT-HDP), 2012 13th International Conference on
Conference_Location
Guilin
Print_ISBN
978-1-4673-1682-8
Electronic_ISBN
978-1-4673-1680-4
Type
conf
DOI
10.1109/ICEPT-HDP.2012.6474652
Filename
6474652
Link To Document