Title :
Method for determining the effective base resistance of bipolar transistors
Author :
Zimmer, T. ; Berkner, J. ; Branciard, B. ; Lewis, N. ; Duluc, J.B. ; Dom, J.P.
Author_Institution :
Lab. de Microelectron., Bordeaux I Univ., Talence, France
fDate :
29 Sep-1 Oct 1996
Abstract :
A simple DC method for integrated transistor base resistance extraction is described. Unlike other commonly-used DC methods, it does not need any knowledge about emitter or collector resistances. It is based on monitoring the substrate current of the parasitic vertical p-n-p transistor, when the intrinsic n-p-n transistor is saturated
Keywords :
bipolar integrated circuits; bipolar transistors; electric resistance measurement; equivalent circuits; integrated circuit measurement; DC method; bipolar transistors; effective base resistance; integrated transistor; intrinsic n-p-n transistor saturation; parasitic vertical p-n-p transistor; substrate current monitoring; Bipolar transistors; Current measurement; Data analysis; Doping; Electrical resistance measurement; Equations; Error correction; Force measurement; Noise measurement; Voltage measurement;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1996., Proceedings of the 1996
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-3516-3
DOI :
10.1109/BIPOL.1996.554622
