The high resistivity properties of tungsten nitride thin films deposited by RF&DC sputtering

Author

Lee, Woo-Sun ; Chung, Yong-Ho ; Kim, Nam-Oh

Author_Institution

Dept. of Electr. Eng., Chosun Univ., Kwangju City, South Korea

Volume

2

fYear

1997

fDate

25 -30 May 1997

Firstpage

674

Abstract

We investigated the high resistivity properties of tungsten and tungsten nitride thin films deposited by RF and DC sputtering system. It deposited at various conditions that determine the resistivity and sheet resistivity. The properties of the resistivity and sheet resistivity of these films measured under various conditions. Resistivity and sheet resistance analyzed the flow rate of the argon gas and contents of nitrogen from nitrogen-argon gas mixtures. We found that these resistivities were depend on the temperature of substrate, gas flow rate and RF power. Very high and low resistivity of tungsten films obtained by DC sputtering. As the increase of contents of nitrogen gas obtained from nitrogen-argon gas mixture, tungsten nitride thin films deposited by the reactive DC sputtering and the resistivities of these films increased

Keywords

electrical resistivity; sputtered coatings; tungsten compounds; DC sputtering; RF sputtering; WN; resistivity; sheet resistivity; tungsten nitride thin film; Argon; Conductivity; Electrical resistance measurement; Fluid flow; Nitrogen; Radio frequency; Sputtering; Temperature dependence; Transistors; Tungsten;

fLanguage

English

Publisher

ieee

Conference_Titel

Properties and Applications of Dielectric Materials, 1997., Proceedings of the 5th International Conference on

Conference_Location

Seoul

Print_ISBN

0-7803-2651-2

Type

conf

DOI

10.1109/ICPADM.1997.616525

Filename

616525