Statical simulation and analysis on 650V VDMOS tubes

Author

Jiang Wei

Author_Institution

Coll. of Inf. & Commun. Eng., Heilongjiang Inst. of Technol., Harbin, China

Volume

02

fYear

2013

fDate

16-18 Aug. 2013

Firstpage

1311

Lastpage

1314

Abstract

Being one of mainstream products in power electronics field, VDMOS has the features of strong input impedance, high switching speed, well heat stability and wide safety operation area. It is widely used in various kinds of fields such as motor driving, switch power supply, automotive electronics, energy saving lamp and so on. In this thesis, through calculation and simulation, the best design of VDMOS can be found in order to meet requirement which the device has 650V of drain-source voltage. It will be mainly focused to simulate to breakdown voltage, I-V input characteristics and transfer characteristics about static characteristics. Satisfied result will be gained and it will also meet design requirement.

Keywords

MOS integrated circuits; MOSFET; I-V input characteristics; MOS field effect transistor; MOSFET; VDMOS tubes; automotive electronics; breakdown voltage; drain-source voltage; energy saving lamp; motor driving; power electronics field; statical simulation; switch power supply; transfer characteristics; voltage 650 V; Electric breakdown; Electrodes; Electron tubes; Heating; 650V; MEDICI; Static simulation; VDMOS;

fLanguage

English

Publisher

ieee

Conference_Titel

Measurement, Information and Control (ICMIC), 2013 International Conference on

Conference_Location

Harbin

Print_ISBN

978-1-4799-1390-9

Type

conf

DOI

10.1109/MIC.2013.6758200

Filename

6758200