Ta-based barrier layer improved by plasma immersion ion implantation

Author

Jiang Suhua ; Fu, Ran ; Chu, Peter ; Zong Xiangfu

Author_Institution

Dept. of Mater. Sci., Fudan Univ., Shanghai, China

fYear

2004

fDate

1-1 July 2004

Firstpage

237

Abstract

Summary form only given. Ta and TaN have been proved to be effective barrier layer materials in copper interconnection. Carbon is implanted into 25 nm Ta and TaN films with different doses by plasma immersion ion implantation (PIII). After annealed under 700/spl deg/C for half an hour, a secondary ion mass spectrometer (SIMS) study shows that, the performance of implanted Ta-based barrier layer is much better than before implanted. Transmission electron microscopy (TEM) investigates the microstructure of samples. Mechanism of this effect is discussed based on detailed comparison between samples with and without PIII.

Keywords

annealing; carbon; copper; interconnections; metallic thin films; plasma immersion ion implantation; secondary ion mass spectra; tantalum; tantalum compounds; transmission electron microscopy; 1 hour; 25 nm; 700 degC; Cu; SIMS; TEM; Ta based barrier layer; Ta:C; TaN barrier layer; TaN thin film; TaN:C; annealing; carbon implantation; copper interconnection; microstructure; plasma immersion ion implantation; secondary ion mass spectrometry; transmission electron microscopy; Density measurement; Ion implantation; Materials science and technology; Physics; Plasma density; Plasma immersion ion implantation; Plasma materials processing; Plasma measurements; Probes; Scanning electron microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Plasma Science, 2004. ICOPS 2004. IEEE Conference Record - Abstracts. The 31st IEEE International Conference on

Conference_Location

Baltimore, MD, USA

ISSN

0730-9244

Print_ISBN

0-7803-8334-6

Type

conf

DOI

10.1109/PLASMA.2004.1339855

Filename

1339855