DocumentCode
3504465
Title
RF components implemented in an analog SiGe bipolar technology
Author
Burghartz, J.N. ; Soyuer, M. ; Jenkins, K.A. ; Kies, M. ; Dolan, P. ; Stein, K. ; Malinowski, J. ; Harame, D.L.
Author_Institution
Res. Div., IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
fYear
1996
fDate
29 Sep-1 Oct 1996
Firstpage
138
Lastpage
141
Abstract
Several components for the design of RF transceivers on silicon substrates, developed in a manufacturable analog SiGe bipolar technology without any significant process alterations, are described. Spiral inductors in the range ~0.15-80 nH with typical maximum Q´s of 3-20, MOS and MIM capacitors (1-2 pF) with Q´s up to 80, and varactors with 40% tuning range and Q´s of 20-50 are presented
Keywords
Ge-Si alloys; MIM devices; MOS capacitors; UHF integrated circuits; bipolar analogue integrated circuits; circuit tuning; inductors; semiconductor materials; transceivers; varactors; MIM capacitors; MOS capacitors; RF components; RF transceivers; SiGe; analog bipolar technology; maximum Q; spiral inductors; tuning range; varactors; Capacitance; Coils; Doping; Germanium silicon alloys; Inductance; Inductors; Q factor; Radio frequency; Silicon germanium; Spirals;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting, 1996., Proceedings of the 1996
Conference_Location
Minneapolis, MN
ISSN
1088-9299
Print_ISBN
0-7803-3516-3
Type
conf
DOI
10.1109/BIPOL.1996.554628
Filename
554628
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