Silicon bipolar transistor design and modeling for microwave integrated circuit applications

Author

Larson, Lawrence E.

Author_Institution

Dept. of Head-Telecommun. Technol., Hughes Res. Labs., Malibu, CA, USA

fYear

1996

fDate

29 Sep-1 Oct 1996

Firstpage

142

Lastpage

148

Abstract

This paper summarizes the recent progress in the fabrication, design, and modeling of silicon and Si/SiGe bipolar transistors for high-frequency microwave integrated circuit applications. These devices are now capable of performance levels that were only achievable with GaAs technology just a few years ago. The specific device requirements for low-noise signal and power amplifiers are discussed, as well as required improvements in device modeling for these applications

Keywords

Ge-Si alloys; bipolar MMIC; elemental semiconductors; integrated circuit modelling; microwave amplifiers; semiconductor device models; semiconductor materials; silicon; Si-SiGe; bipolar transistors; device modeling; device requirements; low-noise amplifiers; microwave integrated circuit applications; performance levels; power amplifiers; signal amplifiers; Application specific integrated circuits; Bipolar integrated circuits; Bipolar transistors; Fabrication; Gallium arsenide; Germanium silicon alloys; Integrated circuit modeling; Microwave devices; Microwave integrated circuits; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 1996., Proceedings of the 1996

Conference_Location

Minneapolis, MN

ISSN

1088-9299

Print_ISBN

0-7803-3516-3

Type

conf

DOI

10.1109/BIPOL.1996.554633

Filename

554633