The MIIS structure capacitor fabricated with high permittivity material

Author

Parnklang, Jirawath ; Surathammanun, Jarupich ; Julprapa, Attaya ; Riewruja, Vanchai ; Titiroongruang, Wisut

Author_Institution

Fac. of Eng., King Mongkut´´s Inst. of Technol., Bangkok, Thailand

Volume

2

fYear

1999

fDate

36495

Firstpage

1128

Abstract

The MIIS (Metal Insulator Intrinsic Semiconductor) structure capacitor consists of the aluminum, ZnO insulator and n-type silicon doped with gold atoms. The different electrical characteristics of the devices from the standard MOIS (Metal Oxide Intrinsic Semiconductor) structure capacitor which is fabricated from SiO₂ are presented in this paper. The experimental results show that the threshold voltage of the devices (V_TO) is smaller than the MOIS devices, the zinc oxide capacitor values (C_OX) are higher but the total capacitor value (C_T) of the device does not change

Keywords

MIS capacitors; MOSFET; aluminium; elemental semiconductors; gold; permittivity; silicon; zinc compounds; Al-ZnO-Si:Au; MIIS structure capacitor; electrical characteristics; high permittivity material; metal insulator intrinsic semiconductor; threshold voltage; total capacitor value; Aluminum; Capacitors; Electric variables; Gold; Insulation; Metal-insulator structures; Permittivity; Silicon; Threshold voltage; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

TENCON 99. Proceedings of the IEEE Region 10 Conference

Conference_Location

Cheju Island

Print_ISBN

0-7803-5739-6

Type

conf

DOI

10.1109/TENCON.1999.818623

Filename

818623