DocumentCode
3504572
Title
Observation of fringelike electron emission pattern from triode Pt nano electron source fabricated by electron-beam-induced deposition
Author
Kitayama, Tomohisa ; Abo, Satoshi ; Wakaya, Fujio ; Takai, Mikio
Author_Institution
Center for Quantum Sci. & Technol. under Extreme Conditions, Osaka Univ., Toyonaka, Japan
fYear
2012
fDate
9-13 July 2012
Firstpage
1
Lastpage
2
Abstract
Fringelike electron emission patterns from Pt nanocrystalline field emitters fabricated by electron beam induced deposition (EBID) were observed. The electron emission sites were, further, observed by field ion microscopy, showing adjacent two emission sites within a diameter of a Pt nanocrystal. These results indicate that the origin of the fringelike electron emission patterns of Pt field emitters fabricated by EBID are the electron wave interference induced by electrons emitted from adjacent two electron emission sites on a Pt nanocrystal. In this study, a Pt nano electron source with a triode structure that has a gate electrode in order to control the intensity of fringelike emission pattern with low gate voltage has been fabricated. Characteristics of Pt nano electron source were measured at room temperature in a chamber with a base vacuum of 10-8 Pa. The emission current was observed at a gate voltage of 30 V and showed a linear dependence in Fowler-Nordheim plots. Electron wave interference patterns observed were in good agreement with a Fraunhofer diffraction model.
Keywords
Fraunhofer diffraction; electrodes; electron beam deposition; electron field emission; field emission ion microscopy; nanofabrication; nanostructured materials; platinum; triodes; EBID; Fowler-Nordheim plots; Fraunhofer diffraction model; Pt; electron beam induced deposition; electron wave interference patterns; field ion microscopy; fringe like electron emission pattern observation; gate electrode; linear dependence; low gate voltage; nanocrystal; nanocrystalline field emitters; temperature 293 K to 298 K; triode platinum nanoelectron source; triode structure; voltage 30 V; Apertures; Electron beams; Electron emission; Electron sources; Interference; Logic gates; Nanocrystals; electron beam; electron beam induced deposition; electron wave interference; field emission electron;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Nanoelectronics Conference (IVNC), 2012 25th International
Conference_Location
Jeju
ISSN
pending
Print_ISBN
978-1-4673-1983-6
Electronic_ISBN
pending
Type
conf
DOI
10.1109/IVNC.2012.6316896
Filename
6316896
Link To Document