• DocumentCode
    3504572
  • Title

    Observation of fringelike electron emission pattern from triode Pt nano electron source fabricated by electron-beam-induced deposition

  • Author

    Kitayama, Tomohisa ; Abo, Satoshi ; Wakaya, Fujio ; Takai, Mikio

  • Author_Institution
    Center for Quantum Sci. & Technol. under Extreme Conditions, Osaka Univ., Toyonaka, Japan
  • fYear
    2012
  • fDate
    9-13 July 2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Fringelike electron emission patterns from Pt nanocrystalline field emitters fabricated by electron beam induced deposition (EBID) were observed. The electron emission sites were, further, observed by field ion microscopy, showing adjacent two emission sites within a diameter of a Pt nanocrystal. These results indicate that the origin of the fringelike electron emission patterns of Pt field emitters fabricated by EBID are the electron wave interference induced by electrons emitted from adjacent two electron emission sites on a Pt nanocrystal. In this study, a Pt nano electron source with a triode structure that has a gate electrode in order to control the intensity of fringelike emission pattern with low gate voltage has been fabricated. Characteristics of Pt nano electron source were measured at room temperature in a chamber with a base vacuum of 10-8 Pa. The emission current was observed at a gate voltage of 30 V and showed a linear dependence in Fowler-Nordheim plots. Electron wave interference patterns observed were in good agreement with a Fraunhofer diffraction model.
  • Keywords
    Fraunhofer diffraction; electrodes; electron beam deposition; electron field emission; field emission ion microscopy; nanofabrication; nanostructured materials; platinum; triodes; EBID; Fowler-Nordheim plots; Fraunhofer diffraction model; Pt; electron beam induced deposition; electron wave interference patterns; field ion microscopy; fringe like electron emission pattern observation; gate electrode; linear dependence; low gate voltage; nanocrystal; nanocrystalline field emitters; temperature 293 K to 298 K; triode platinum nanoelectron source; triode structure; voltage 30 V; Apertures; Electron beams; Electron emission; Electron sources; Interference; Logic gates; Nanocrystals; electron beam; electron beam induced deposition; electron wave interference; field emission electron;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Nanoelectronics Conference (IVNC), 2012 25th International
  • Conference_Location
    Jeju
  • ISSN
    pending
  • Print_ISBN
    978-1-4673-1983-6
  • Electronic_ISBN
    pending
  • Type

    conf

  • DOI
    10.1109/IVNC.2012.6316896
  • Filename
    6316896