The characteristics of wet gate oxide device and nitride oxide (NO) device

Author

Jae-Young, Yi ; Yong-Hui, Lee ; Laszlo, Szirmay-Kalos ; Cheon-Hee, Yi

Author_Institution

Dept. of Control Eng. & Inf., Tech. Univ. Budapest, Hungary

Volume

2

fYear

1999

fDate

36495

Firstpage

1136

Abstract

In this paper we fabricated and tested the 0.26 μm NMOSFET with wet gate oxide and nitride oxide gate to compare that the characteristics of hot carrier effect, charge to breakdown, transistor Id_Vg curve, charge trapping, and SILC (stress induced leakage current) using the HP4145 device tester. As a result we find that the characteristics of nitride oxide gate device are better than wet gate oxide device, especially hot carrier lifetime (nitride oxide gate device has a lifetime of 30 years, but the lifetime of wet gate oxide was only 0.1 year), variation of Vg, charge to breakdown and charge trapping

Keywords

MOSFET; carrier lifetime; characteristics measurement; electron traps; hot carriers; leakage currents; semiconductor device breakdown; semiconductor device measurement; semiconductor device reliability; 0.26 micron; HP4145 device tester; NMOSFET; SILC; carrier lifetime; charge to breakdown; charge trapping; hot carrier effect; nitride oxide device; stress induced leakage current; wet gate oxide device; Degradation; Electric breakdown; Electron traps; Electronic equipment testing; Hot carrier effects; Hot carriers; Life testing; MOSFET circuits; Oxidation; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

TENCON 99. Proceedings of the IEEE Region 10 Conference

Conference_Location

Cheju Island

Print_ISBN

0-7803-5739-6

Type

conf

DOI

10.1109/TENCON.1999.818625

Filename

818625