Title :
Characteristics of P-channel Si nano-crystal memory
Author :
Han, Kwangseok ; Kim, Ilgweon ; Shin, Hyungcheol
Author_Institution :
Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Taejon, South Korea
Abstract :
The nano-crystal memory operates at low voltage compared to conventional flash memory due to thinner tunneling dielectrics, since the spacing between the Si dots suppresses the charge loss through lateral paths. Recently, N-channel nano-crystal memory has been reported to have good characteristics compared to EEPROM. In this paper, the characteristics of the P-channel nano-crystal memory, which stores holes as information, is presented for the first time
Keywords :
chemical vapour deposition; elemental semiconductors; nanotechnology; semiconductor quantum dots; semiconductor storage; silicon; tunnelling; LPCVD; P-channel nano-crystal memory; Si; charge loss; hole storage; lateral paths; tunneling dielectrics; Dielectric losses; Dielectric substrates; Equations; Flash memory; Low voltage; Nanoscale devices; Silicon; Threshold voltage; Time measurement; Tunneling;
Conference_Titel :
TENCON 99. Proceedings of the IEEE Region 10 Conference
Conference_Location :
Cheju Island
Print_ISBN :
0-7803-5739-6
DOI :
10.1109/TENCON.1999.818626
