Ultimate low threshold and high efficiency calculated for GaInAsP microdisk injection lasers with optimum posts

Author

Fujita, M. ; Sakai, A. ; Ohsaki, D. ; Baba, T.

Author_Institution

Div. of Electr. & Comput. Eng., Yokohama Nat. Univ., Japan

Volume

3

fYear

1999

fDate

Aug. 30 1999-Sept. 3 1999

Firstpage

616

Abstract

Recently, we have demonstrated the room temperature CW operation in a GaInAsP microdisk laser with a record low threshold of 150 /spl mu/A and the smallest disk diameter of 2 /spl mu/m. We expect to further improve the performance to make this device a fundamental active element in a functional photonic circuit. However, the ultimate performance has never been discussed. In the study, we investigated the lowest threshold and the highest internal differential quantum efficiency expected in a realistic device.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser beams; laser modes; microdisc lasers; quantum well lasers; 150 muA; 2 mum; GaInAsP; GaInAsP microdisk injection lasers; disk diameter; functional photonic circuit; fundamental active element; internal differential quantum efficiency; laser efficiency; laser performance; laser threshold; optimum posts; realistic device; room temperature CW operation; ultimate performance; Charge carrier density; Circuits; Optical losses; Optical scattering; Particle scattering; Performance loss; Quantum well devices; Stimulated emission; Temperature; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1999. CLEO/Pacific Rim '99. The Pacific Rim Conference on

Conference_Location

Seoul, South Korea

Print_ISBN

0-7803-5661-6

Type

conf

DOI

10.1109/CLEOPR.1999.817747

Filename

817747