Formation mechanism dependence on laser power of UV-laser ablated silicon surface gratings

Author

Cheng-Yen Chen ; Gurtler, S. ; Yang, C.C.

Author_Institution

Inst. of Electro-Opt. Eng., Nat. Taiwan Univ., Taipei, Taiwan

Volume

3

fYear

1999

fDate

Aug. 30 1999-Sept. 3 1999

Firstpage

624

Abstract

We report our results of UV-laser ablated Si surface gratings. It was found that different laser-matter interactions were involved in forming the surface gratings when different levels of laser power were used. Hence, different morphologies of gratings were observed. In fabricating a grating, a silicon wafer was exposed to the interference fringes formed through a prism or a holographic system with the fourth-harmonic (266 nm) of a Q-switched Nd:YAG laser.

Keywords

holographic gratings; laser ablation; optical fabrication; silicon; surface phenomena; 266 nm; Q-switched Nd:YAG laser; Si; UV-laser ablated Si surface gratings; UV-laser ablated silicon surface gratings; YAG:Nd; YAl5O12:Nd; formation mechanism dependence; fourth-harmonic; grating fabrication; holographic system; interference fringes; laser power; laser-matter interactions; prism; Diffraction; Gratings; Hafnium; Interference; Laser ablation; Oxidation; Power lasers; Silicon; Surface emitting lasers; Surface morphology;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1999. CLEO/Pacific Rim '99. The Pacific Rim Conference on

Conference_Location

Seoul, South Korea

Print_ISBN

0-7803-5661-6

Type

conf

DOI

10.1109/CLEOPR.1999.817751

Filename

817751