Modyfying device structure for high emission current for x-ray tube application from triode-type carbon nanotube cathode

The triode-typed field emission (FE) devices using carbon nanotube (CNT) emitters for the x-ray application were fabricated. For the stability of the device, the leakage current between cathode and gate, and the emission current to the anode electrode should be controlled. We realized that the thickness of insulating layer-gap distance between cathode and gate- and the space between the gate electrodes-electron path from cathode and anode- should be controlled for the ratio of the current from cathode to anode (Ia) to the current from cathode to gate (Ig). The ratio of Ia to Ig can be represented the device efficiency. The rectangular-mesh electrode and screen printed insulating layer were controlled for Ia/Ig. When the size of gate hole was the 50 by 700 um - the electrode size is 25 by 700 um - and the thickness of insulator layer was 65 μm, the maximum ratio of Ia/(Ia+Ig) was 0.63.