Deposition of SiO/sub x/films from HMDSO/O/sub 2/ plasma under continuous wave and pulsed modes

Summary form only given. Inductively coupled RF plasma enhanced chemical deposition were applied to get SiO/sub x/ on polymeric films with various processing conditions, such as input power, monomer/oxygen feed ratio, and duty cycle. Hexamethyldisiloxane (HMDSO) was used as feed monomer and oxygen was used as mixing gas. Input power was varied from 50 to 300 Watt. Chemical bonding information of deposited film by FTIR shows that the absorption peak of Si-O near 1032 cm/sup -1/ moved toward 1066 cm/sup -1/ and Si-CH/sub 3/ peak was decreased as oxygen amount was increased. I-V curves from Langmuir Probe (LP) was used to measure electron temperature, electron density and plasma potential. Optical Emission Spectroscopy (OES) was used to measure the plasma species and intensity of species and to obtain plasma pathway. Plasma density was of 4/spl times/10/sup 8/ [cm/sup -3/] and electron temperature of 2.8 eV and maximum deposition rate was 640 A/min at 150 Watt. Plasma parameters, such as electron temperature, electron density, plasma potential, and plasma species were correlated to the properties of deposited films.