Specific features of field emission from an Al0.3Ga0.7N/GaN system

Author

Semenenko, M. ; Yilmazoglu, O.

Author_Institution

Lab. of Non-Conventional & Renewable Energy Sources, V. Ye. Lashkaryov Inst. of Semicond. Phys., Kiev, Ukraine

fYear

2012

fDate

9-13 July 2012

Firstpage

1

Lastpage

2

Abstract

The electron field emission properties from a photoelectrochemically etched AlGaN/GaN heterostructure grown by MOCVD was investigated. Reproducible peaks were obtained in the field emission characteristics. The origin of these peaks was explained by the proposed model of resonant tunneling of electrons. The widths of the wells and barriers have been estimated by simulating the spectra of the energy distribution of field emission electrons by the transfer-matrix technique and are 8 nm and 3 nm, respectively.

Keywords

III-V semiconductors; MOCVD; aluminium compounds; electron field emission; etching; gallium compounds; matrix algebra; photoelectrochemistry; resonant tunnelling; semiconductor growth; wide band gap semiconductors; Al_0.3Ga_0.7N-GaN; MOCVD; electron field emission property; electron resonant tunneling model; energy distribution; field emission characteristics; photoelectrochemically etched heterostructure; size 3 nm; size 8 nm; transfer-matrix technique; Aluminum gallium nitride; Etching; Gallium nitride; Iron; Nanoparticles; Resonant tunneling devices; GaN; field emission; resonant tunneling system;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Nanoelectronics Conference (IVNC), 2012 25th International

Conference_Location

Jeju

ISSN

pending

Print_ISBN

978-1-4673-1983-6

Electronic_ISBN

pending

Type

conf

DOI

10.1109/IVNC.2012.6316919

Filename

6316919