Fabrication of narrow far-field InGaAs-InAlGaAs broad-area lasers using quantum well intermixed extended cavities

Author

Kowalski, O.P. ; Hamilton, C.J. ; McDougall, S.D. ; Vogele, B. ; Marsh, J.H. ; Bryce, A.C.

Author_Institution

Dept. of Electron. & Electr. Eng., Glasgow Univ., UK

fYear

1998

fDate

3-8 May 1998

Firstpage

37

Lastpage

38

Abstract

Summary form only given. We report the first demonstration of InGaAs-InAlGaAs extended cavity lasers, using a new quantum well intermixing (QWI) process. The technique involves the deposition of a layer of sputtered SiO/sub 2/ on the semiconductor surface, followed by a high temperature anneal. The deposition process generates point defects at the sample surface by ion bombardment, which, during the anneal stage, diffuse into the active region, significantly enhancing the interdiffusion of well and barrier atoms.

Keywords

III-V semiconductors; aluminium compounds; annealing; gallium arsenide; indium compounds; laser cavity resonators; optical fabrication; quantum well lasers; sputter deposition; InGaAs-InAlGaAs; InGaAs-InAlGaAs broad-area lasers; SiO/sub 2/; active region; anneal stage; barrier atom; deposition process; interdiffusion; ion bombardment; laser cavity resonators; narrow far-field; point defects; quantum well intermixed extended cavities; quantum well intermixing process; quantum well lasers; sample surface; semiconductor surface; sputter deposition; sputtered SiO/sub 2/; Diffraction; Etching; Gallium arsenide; Gold; Lasers and Electro-Optics Society; Optical arrays; Optical device fabrication; Optical refraction; Quantum well lasers; Refractive index;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

1-55752-339-0

Type

conf

DOI

10.1109/CLEO.1998.675829

Filename

675829