DocumentCode
3505300
Title
Silicon based micro-scale metal grid for field emission device
Author
Kim, Jaehong ; Kim, Jung-Il ; Kim, Geun-Ju ; Heo, Duchang ; Jeon, Seok-Gy ; Shin, Dong Hoon ; Sun, Yuning ; Lee, Cheol Jin
Author_Institution
Adv. Med. Device Res. Center, Korea Electrotechnol. Res. Inst. (KERI), Ansan, South Korea
fYear
2012
fDate
9-13 July 2012
Firstpage
1
Lastpage
2
Abstract
For application to electron field emission devices, a metal grid based on a silicon frame is introduced. Silicon frame is used to improve the thermal resistivity and electrical stability by electron beam. Silicon based micro-scale metal grid fabricated using MEMS technology.
Keywords
electron field emission; elemental semiconductors; microfabrication; silicon; thermal conductivity; MEMS technology; Si; electrical stability; electron beam; electron field emission devices; silicon based microscale metal grid; silicon frame; thermal resistivity; Extraterrestrial measurements; Metals; Power system stability; Scanning electron microscopy; Silicon; Temperature measurement; Thermal stability; Field emission; MEMS; Metal grid;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Nanoelectronics Conference (IVNC), 2012 25th International
Conference_Location
Jeju
ISSN
pending
Print_ISBN
978-1-4673-1983-6
Electronic_ISBN
pending
Type
conf
DOI
10.1109/IVNC.2012.6316932
Filename
6316932
Link To Document