Bipolar-SOI active filters for UHF radio communications

Author

Saul, P.H. ; Goody, S.B.

Author_Institution

GEC Plessey Semicond., Swindon, UK

fYear

1996

fDate

29 Sep-1 Oct 1996

Firstpage

161

Lastpage

164

Abstract

Inductorless, monolithic silicon bipolar circuits have been manufactured which offer selectivity, gain and low noise performance at UHF frequencies with low power consumption. The use of a silicon on insulator (SOI) substrate reduces parasitic capacitance, while the trenched sidewalls complete the oxide isolation of the transistors

Keywords

UHF filters; bipolar analogue integrated circuits; biquadratic filters; capacitance; elemental semiconductors; integrated circuit noise; mobile radio; silicon; silicon-on-insulator; SOI substrate; Si; UHF radio communications; bipolar-SOI active filters; gain; low noise performance; oxide isolation; parasitic capacitance; power consumption; selectivity; trenched sidewalls; Active filters; Circuit noise; Energy consumption; Manufacturing; Parasitic capacitance; Performance gain; Radio communication; Radiofrequency integrated circuits; Silicon on insulator technology; UHF circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 1996., Proceedings of the 1996

Conference_Location

Minneapolis, MN

ISSN

1088-9299

Print_ISBN

0-7803-3516-3

Type

conf

DOI

10.1109/BIPOL.1996.554637

Filename

554637

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3505385