Title :
Bipolar-SOI active filters for UHF radio communications
Author :
Saul, P.H. ; Goody, S.B.
Author_Institution :
GEC Plessey Semicond., Swindon, UK
fDate :
29 Sep-1 Oct 1996
Abstract :
Inductorless, monolithic silicon bipolar circuits have been manufactured which offer selectivity, gain and low noise performance at UHF frequencies with low power consumption. The use of a silicon on insulator (SOI) substrate reduces parasitic capacitance, while the trenched sidewalls complete the oxide isolation of the transistors
Keywords :
UHF filters; bipolar analogue integrated circuits; biquadratic filters; capacitance; elemental semiconductors; integrated circuit noise; mobile radio; silicon; silicon-on-insulator; SOI substrate; Si; UHF radio communications; bipolar-SOI active filters; gain; low noise performance; oxide isolation; parasitic capacitance; power consumption; selectivity; trenched sidewalls; Active filters; Circuit noise; Energy consumption; Manufacturing; Parasitic capacitance; Performance gain; Radio communication; Radiofrequency integrated circuits; Silicon on insulator technology; UHF circuits;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1996., Proceedings of the 1996
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-3516-3
DOI :
10.1109/BIPOL.1996.554637
