DocumentCode
3505405
Title
Raman emission in porous silicon at 1.5 micron: a possible approach
Author
Sirleto, L. ; Ferrara, M.A. ; Moretti, L. ; Rendina, I. ; Rossi, A. ; Santamato, E. ; Jalali, B.
Author_Institution
Istituto per la Microelettronica e Microsistemi, CNR, Napoli, Italy
fYear
2005
fDate
22-24 June 2005
Firstpage
103
Lastpage
108
Abstract
In this paper, in order to generate radiation at 1.54 micron, an approach based on Raman scattering in porous silicon is presented. Experimental results, proving spontaneous Raman emission at 1.5 micron and tuning of the Stokes shift, are reported. Finally, we discuss about the possibility to enhance the Raman gain coefficient and to eliminate two photon absorption in porous silicon.
Keywords
elemental semiconductors; optical materials; optical tuning; porous semiconductors; silicon; spontaneous emission; stimulated Raman scattering; 1.5 micron; Raman emission; Raman gain coefficient; Raman scattering; Si; Stokes shift tuning; porous silicon; spontaneous emission; two photon absorption elimination; Brillouin scattering; Light scattering; Optical scattering; Particle scattering; Phonons; Photonic crystals; Raman scattering; Silicon; Stimulated emission; Waveguide junctions;
fLanguage
English
Publisher
ieee
Conference_Titel
Fibres and Optical Passive Components, 2005. Proceedings of 2005 IEEE/LEOS Workshop on
Print_ISBN
0-7803-8949-2
Type
conf
DOI
10.1109/WFOPC.2005.1462108
Filename
1462108
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