• DocumentCode
    3505449
  • Title

    Vacuum potential barrier and field emission characteristic of graphene edges

  • Author

    Wang, Weiliang ; Shao, Junwen ; Li, Zhibing

  • Author_Institution
    State Key Lab. of Optoelectron. Mater. & Technol., Sun Yat-sen Univ., Guangzhou, China
  • fYear
    2012
  • fDate
    9-13 July 2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We investigated the vacuum potential barriers of various graphene edges. It is found that the exchange-correlation potential correction is significant to the edge structures with electronegativity higher than carbon. The correction leads to the local work function decreased by more than 1 eV for the O terminated edge. An extraordinary low vacuum barrier height of 2.0 eV has been found on the zigzag-edge of graphene terminated with the secondary amine via the ab initio calculation. This edge structure has a flat band of edge states attached to the gamma point where the transversal kinetic energy is vanishing. We show that the field electron emission is dominated by the flat band. The edge states pin the Fermi level to a constant, leading to an extremely narrow emission energy width. The graphene with such edge is a promising line field electron emitter that can produce highly coherent emission current.
  • Keywords
    Fermi level; ab initio calculations; electron field emission; graphene; Fermi level; ab initio calculation; edge states; edge structures; electron volt energy 2.0 eV; electronegativity; exchange-correlation potential correction; extremely narrow emission energy width; field emission characteristic; flat band; gamma point; graphene zig-zag edges; line field electron emitter; local work function; transversal kinetic energy; vacuum potential barrier characteristic; Educational institutions; Electric potential; Elementary particle vacuum; Materials; Physics; Sun; exchange-correlation potential; field emission; graphene; potential barrier;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Nanoelectronics Conference (IVNC), 2012 25th International
  • Conference_Location
    Jeju
  • ISSN
    pending
  • Print_ISBN
    978-1-4673-1983-6
  • Electronic_ISBN
    pending
  • Type

    conf

  • DOI
    10.1109/IVNC.2012.6316940
  • Filename
    6316940