Simulation of effects of geometrical parameters on the performance of a gated CuO nanowire cold cathode vacuum triode

Author

Li, Guangxiang ; Zhong, Biying ; Chen, Jun

Author_Institution

State Key Lab. of Optoelectron. Mater. & Technol., Sun Yat-sen Univ., Guangzhou, China

fYear

2012

fDate

9-13 July 2012

Firstpage

1

Lastpage

2

Abstract

The effects of geometrical parameters on the performance of a gated CuO nanowire cold cathode vacuum triode were studied by a numerical simulation. A finite element method was used to simulate the electrical field distribution and electron trajectory. The transfer and output characteristics of the nanowire cold cathode vacuum triode were simulated for devices with different geometrical parameters. It was found that the variation of the gate to cathode distance strongly affects the electrical characteristics of the triode.

Keywords

cathodes; copper compounds; finite element analysis; nanowires; triodes; CuO; cathode distance; electrical characteristics; electrical field distribution simulation; electron trajectory; finite element method; geometrical parameter effect simulation; nanowire cold cathode vacuum triode; numerical simulation; Anodes; Cathodes; Educational institutions; Integrated circuit modeling; Logic gates; Microelectronics; Performance evaluation; CuO nanowire; finite element method; vacuum triode;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Nanoelectronics Conference (IVNC), 2012 25th International

Conference_Location

Jeju

ISSN

pending

Print_ISBN

978-1-4673-1983-6

Electronic_ISBN

pending

Type

conf

DOI

10.1109/IVNC.2012.6316944

Filename

6316944