Title :
A buffered distributed spray MOCVD reactor design
Author :
Shaolin Hu ; Zhiyin Gan ; Han Yan ; Sheng Liu
Author_Institution :
State Key Lab. for Digital Manuf. Equip. & Technol., Huazhong Univ. of Sci. & Technol., Wuhan, China
Abstract :
We have developed a novel MOCVD reactor, which is called buffered distributed spray (BDS) MOCVD reactor, for the multiple wafer growth of films of III-V materials. In the present study, a fundamental and multi-field model based on the computational fluid dynamic (CFD) simulation of coupled flow, heat and mass transfer is presented to describe the epitaxial growth of gallium nitride (GaN). It is investigated how reactor geometry affects flow field, temperature profile, and concentration distribution. For comparison, a horizontal reactor with the same geometry is also modeled. The modeling results show that the BDS MOCVD reactor performs well in GaN growth.
Keywords :
III-V semiconductors; MOCVD; computational fluid dynamics; gallium compounds; heat transfer; mass transfer; semiconductor growth; BDS MOCVD reactor; CFD simulation; GaN; III-V materials; buffered distributed spray MOCVD reactor design; computational fluid dynamic simulation; concentration distribution; coupled flow-heat-mass transfer; epitaxial growth; flow field; fundamental-multifield model; gallium nitride; horizontal reactor; reactor geometry; temperature profile; wafer film growth; Atmospheric modeling; Cooling; Crystals; Light emitting diodes; MOCVD; Stress; Surface treatment;
Conference_Titel :
Electronic Packaging Technology and High Density Packaging (ICEPT-HDP), 2012 13th International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4673-1682-8
Electronic_ISBN :
978-1-4673-1680-4
DOI :
10.1109/ICEPT-HDP.2012.6474771