Effect of carrier leakage in Q-switched two-section AlGaAs multiple-quantum-well semiconductor lasers

Author

Shimizu, M. ; Suzuki, Y. ; Mukai, S. ; Watanabe, M. ; Hasama, T.

Author_Institution

Optoelectron. Div., Electrotech. Lab., Ibaraki, Japan

Volume

3

fYear

1999

fDate

Aug. 30 1999-Sept. 3 1999

Firstpage

920

Abstract

The numerical model used in this analysis is of the two-section MQW semiconductor lasers employed in a previous work. We shows the schematic diagram of the numerical model. The laser cavity consists of the gain region and the saturable absorber. The gain region is pumped with 200 ps electrical pulses, and the saturable absorber is reversely biased. We find that the reduction of the carrier leakage and the optimization of the cavity length are significantly important for short pulse generation.

Keywords

III-V semiconductors; Q-switching; aluminium compounds; carrier mobility; gallium arsenide; laser cavity resonators; laser theory; optical pulse generation; optical saturable absorption; quantum well lasers; semiconductor device models; 200 ps; AlGaAs; Q-switched two-section AlGaAs multiple-quantum-well semiconductor lasers; carrier leakage; cavity length; gain region; laser cavity; numerical model; optimization; ps electrical pulses; reversely biased; saturable absorber; short optical pulse generation; two-section MQW semiconductor lasers; Charge carrier density; Leakage current; Optical losses; Optical pulse generation; Optical pulses; Optical pumping; Pulse generation; Quantum well lasers; Semiconductor lasers; Space vector pulse width modulation;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1999. CLEO/Pacific Rim '99. The Pacific Rim Conference on

Conference_Location

Seoul, South Korea

Print_ISBN

0-7803-5661-6

Type

conf

DOI

10.1109/CLEOPR.1999.817901

Filename

817901