Improved field emission properties of GaAs/MgO-coated single-walled carbon nanotube

Author

Park, Taehee ; Lee, Jongtaek ; Lee, Seungjin ; Park, Hyunjune ; Yi, Whikun

Author_Institution

Dept. of Chem., Hanyang Univ., Seoul, South Korea

fYear

2012

fDate

9-13 July 2012

Firstpage

1

Lastpage

2

Abstract

We measured the field emission (FE) properties and life time stability of single walled carbon nanotubes (SWNTs) after coating with wide-band-gap material (WBGM) and successive negative electron affinity (NEA) material, i.e., magnesium oxide and successive gallium arsenide. Their turn-on field and emission current densities were measured and compared with pristine SWNT film. The FE was increased successively after MgO coating and subsequent GaAs coating for SWNTs. A lifetime test revealed that GaAs/MgO/SWNTs protects SWNT film during FE under exposure to O₂ gas. The field-enhancement factor, β, was calculated from the Fowler-Nordheim equation of FE results.

Keywords

III-V semiconductors; carbon nanotubes; coatings; current density; electron affinity; electron field emission; gallium arsenide; life testing; magnesium compounds; FE property; Fowler-Nordheim equation; GaAs-MgO; NEA material; WBGM; emission current density; field emission property; field-enhancement factor; lifetime stability test; magnesium oxide; single walled carbon nanotubes; single-walled carbon nanotube; successive gallium arsenide; successive negative electron affinity material; turn-on field; wideband-gap material; Carbon nanotubes; Current density; Films; Gallium arsenide; Iron; negative electron affinity material; single walled carbon nanotube; wide-band-gap material;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Nanoelectronics Conference (IVNC), 2012 25th International

Conference_Location

Jeju

ISSN

pending

Print_ISBN

978-1-4673-1983-6

Electronic_ISBN

pending

Type

conf

DOI

10.1109/IVNC.2012.6316969

Filename

6316969