Title :
High-efficiency luminescence up-conversion of infrared to red light in type-I and type-II Al/sub x/Ga/sub 1-x/As/InGaP single heterostructures
Author :
Yong-Hoon Cho ; Lim, H. ; Jhe, W.
Author_Institution :
Dept. of Phys., Seoul Nat. Univ., South Korea
fDate :
Aug. 30 1999-Sept. 3 1999
Abstract :
Photoluminescence (PL) up-conversion or anti-Stokes PL (ASPL) is a phenomenon in which the photon energy of PL output is higher than that of the excitation source. The ASPL phenomena in heterojunctions (HJs) and quantum wells (QWs) have recently received considerable attention since they are believed to have a mechanism quite different from the traditional one in bulk materials with potential device applications such as novel light emitting devices which take advantage of high energy up-conversion efficiencies. The ASPL phenomena in HJs or QWs can be observed with an extremely small excitation density of 0.1 W cm/sup -2/ at temperatures below 10 K, in contrast to the case of bulk semiconductors.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; optical frequency conversion; photoluminescence; semiconductor heterojunctions; Al/sub x/Ga/sub 1-x/As/InGaP single heterostructures; AlGaAs-InGaP; anti-Stokes photoluminescence; high-efficiency luminescence up-conversion; Charge carrier processes; Density measurement; Energy measurement; Heterojunctions; Luminescence; Photonic band gap; Physics; Power engineering and energy; Radiative recombination; Spontaneous emission;
Conference_Titel :
Lasers and Electro-Optics, 1999. CLEO/Pacific Rim '99. The Pacific Rim Conference on
Conference_Location :
Seoul, South Korea
Print_ISBN :
0-7803-5661-6
DOI :
10.1109/CLEOPR.1999.817918
