Growth and fabrication of In/sub x/Ga/sub 1-x/N/GaN multiple quantum well and blue light emitting diodes

Author

Kim, K.S. ; Oh, C.S. ; Lee, K.J. ; Kim, J.-H. ; Kim, Y.S. ; Yang, G.M. ; Hong, C.-H. ; Lim, K.Y. ; Lee, H.J.

Author_Institution

Dept. of Semicond. Sci. & Technol., Chonbuk Nat. Univ., Chonju, South Korea

Volume

3

fYear

1999

fDate

Aug. 30 1999-Sept. 3 1999

Firstpage

959

Abstract

Using photoluminescence (PL) and high resolution x-ray diffraction (HRXRD) measurements, we study the crystal growth parameters affecting the qualities of In/sub x/Ga/sub 1-x/N/GaN multiple quantum wells (MQW), such as GaN barrier thickness, number of wells, doping in GaN barriers, and so on. Additionally, we fabricated blue LEDs using optimized MQW conditions and characterized their properties.

Keywords

III-V semiconductors; MOCVD; X-ray diffraction; gallium compounds; indium compounds; light emitting diodes; photoluminescence; semiconductor growth; semiconductor quantum wells; wide band gap semiconductors; InGaN-GaN; barrier thickness; blue LED; crystal growth parameters; high resolution X-ray diffraction; multiple quantum well; photoluminescence; Fabrication; Fastbus; Gallium nitride; Light emitting diodes; Quantum well devices; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1999. CLEO/Pacific Rim '99. The Pacific Rim Conference on

Conference_Location

Seoul, South Korea

Print_ISBN

0-7803-5661-6

Type

conf

DOI

10.1109/CLEOPR.1999.817920

Filename

817920