• DocumentCode
    3506207
  • Title

    Temperature dependence of the field-emission from the tungsten oxide nanowires

  • Author

    Chen, W.Q. ; Wu, J.Q. ; Dong, L.S. ; Chen, Jun

  • Author_Institution
    State Key Lab. of Optoelectron. Mater. & Technol., Sun Yat-sen Univ., Guangzhou, China
  • fYear
    2012
  • fDate
    9-13 July 2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Field emission characteristics of tungsten oxide (W18O49) nanowires under different temperature was investigated. The results show that the field emission currents increase with increasing temperature. Sharp increase of current was observed in the range from 473K to 673K. A mechanism based on defect-assisted emission process was used to explain the observed phenomena.
  • Keywords
    electron field emission; nanowires; tungsten compounds; W18O49; defect-assisted emission process; field emission characteristics; field emission currents; temperature 473 K to 673 K; temperature dependence; tungsten oxide nanowires; Educational institutions; Materials; Nanowires; Temperature; Temperature dependence; Temperature measurement; Tungsten; Tungsten oxide nanowires; field emission; temperature dependence;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Nanoelectronics Conference (IVNC), 2012 25th International
  • Conference_Location
    Jeju
  • ISSN
    pending
  • Print_ISBN
    978-1-4673-1983-6
  • Electronic_ISBN
    pending
  • Type

    conf

  • DOI
    10.1109/IVNC.2012.6316976
  • Filename
    6316976
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3506207