DocumentCode
3506210
Title
Effects of aluminum as dopants on the AC impedance and J-E behavior of ZnO-Bi2O3 ceramics
Author
Se-Won Hen ; Kang, Hyung-Boo ; Kim, Hyung-Sik
Author_Institution
Han Yang Univ., Seoul, South Korea
Volume
2
fYear
1997
fDate
25 -30 May 1997
Firstpage
863
Abstract
The effects of aluminum dopants on AC impedance and J-E characteristics of ZnO-Bi2O3 binary ceramics have been investigated. The results from J-E behavior and AC impedance analysis show that the presence of aluminum in the interface can be responsible for a decrease of the Schottky barrier height and an increase in grain boundary conductivity. Also, the model based on the resulting dispersion of the grain boundary resistance gives a better account of the shape of the semicircle in heterogeneous microstructures such as the ZnO-Bi2O3-Al2O3 system
Keywords
II-VI semiconductors; Schottky barriers; alumina; bismuth compounds; capacitance; ceramics; dielectric losses; electric impedance; electrical conductivity; grain boundaries; permittivity; varistors; zinc compounds; AC impedance; J-E behavior; Schottky barrier height; ZnO-Bi2O3-Al2O3; ceramics; equivalent circuits; grain boundary conductivity; grain boundary resistance dispersion; heterogeneous microstructure; varistors; Aluminum; Ceramics; Dielectric measurements; Equivalent circuits; Grain boundaries; Impedance; Microstructure; Semiconductor process modeling; Varistors; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Properties and Applications of Dielectric Materials, 1997., Proceedings of the 5th International Conference on
Conference_Location
Seoul
Print_ISBN
0-7803-2651-2
Type
conf
DOI
10.1109/ICPADM.1997.616573
Filename
616573
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