Effects of neutron irradiation at the interface of TiO/sub 2/ film on Si substrate

Summary form only given. TiO/sub 2/ films on Si (111) substrate were prepared by D.C. reaction sputter deposition followed by Ar/sup +/ ion beam bombardment. A layer-like structure with 2MeV neutrons irradiation to a dose of 10/sup 17/-10/sup 19/ cm/sup -2/ was observed at the interface between TiO/sub 2/ film and Si substrate with Scanning Electron Microscope and Electron Probe. The layer-like structure is a multi-layer structure consisting of bright and dark layers with different compositions. Ti element was detected at the deeper area about 15 /spl mu/m below surface. Defect diffusion, impurity and matrix relocation could be responsible for formations of the multi-layer structure and caused broadening of the TiO/sub 2/-Si interface.