DocumentCode :
3506386
Title :
Tin whisker growth on bright Sn films supported by lead-frame alloy substrates
Author :
Ting Liu ; Dongyan Ding ; Yiqing Wang ; Yu Hu ; Yihua Gong ; Galuschki, K.-P.
Author_Institution :
Inst. of Microelectron. Mater. & Technol., Shanghai Jiao Tong Univ., Shanghai, China
fYear :
2012
fDate :
13-16 Aug. 2012
Firstpage :
1145
Lastpage :
1149
Abstract :
In this work, we fabricate bright tin films on two kinds of representative lead-frame substrates (C194 and FeNi42). Ni film was electroplated between Sn plating and the alloy substrate as a diffusion barrier. The samples were stored under 55 °C / 85% RH condition for up to 8,000 hours. The effect of alloy substrate, tin film thickness and Ni barrier on the tin whisker growth was investigated for a comprehensive understanding of the tin whisker growth behavior. It was found that the substrate type has great influence in the tin whisker density. Further, the density and average length of the tin whisker were related to the film thickness. Ni barrier was found strongly prevent Sn whiskers or hillocks growth even after thermal/ humidity storage for 8,000 hours. Surface and cross-sectional observations of IMC formed at the interface were also carried out using field emission scanning electron microscope (FE-SEM).
Keywords :
field emission electron microscopy; films; lead alloys; nickel alloys; scanning electron microscopy; substrates; tin alloys; Ni barrier; bright Sn films; bright tin film fabrication; field emission scanning electron microscope; lead-frame alloy substrates; lead-frame substrates; tin film thickness; tin whisker growth;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Packaging Technology and High Density Packaging (ICEPT-HDP), 2012 13th International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4673-1682-8
Electronic_ISBN :
978-1-4673-1680-4
Type :
conf
DOI :
10.1109/ICEPT-HDP.2012.6474810
Filename :
6474810
Link To Document :
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