DocumentCode
3506386
Title
Tin whisker growth on bright Sn films supported by lead-frame alloy substrates
Author
Ting Liu ; Dongyan Ding ; Yiqing Wang ; Yu Hu ; Yihua Gong ; Galuschki, K.-P.
Author_Institution
Inst. of Microelectron. Mater. & Technol., Shanghai Jiao Tong Univ., Shanghai, China
fYear
2012
fDate
13-16 Aug. 2012
Firstpage
1145
Lastpage
1149
Abstract
In this work, we fabricate bright tin films on two kinds of representative lead-frame substrates (C194 and FeNi42). Ni film was electroplated between Sn plating and the alloy substrate as a diffusion barrier. The samples were stored under 55 °C / 85% RH condition for up to 8,000 hours. The effect of alloy substrate, tin film thickness and Ni barrier on the tin whisker growth was investigated for a comprehensive understanding of the tin whisker growth behavior. It was found that the substrate type has great influence in the tin whisker density. Further, the density and average length of the tin whisker were related to the film thickness. Ni barrier was found strongly prevent Sn whiskers or hillocks growth even after thermal/ humidity storage for 8,000 hours. Surface and cross-sectional observations of IMC formed at the interface were also carried out using field emission scanning electron microscope (FE-SEM).
Keywords
field emission electron microscopy; films; lead alloys; nickel alloys; scanning electron microscopy; substrates; tin alloys; Ni barrier; bright Sn films; bright tin film fabrication; field emission scanning electron microscope; lead-frame alloy substrates; lead-frame substrates; tin film thickness; tin whisker growth;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Packaging Technology and High Density Packaging (ICEPT-HDP), 2012 13th International Conference on
Conference_Location
Guilin
Print_ISBN
978-1-4673-1682-8
Electronic_ISBN
978-1-4673-1680-4
Type
conf
DOI
10.1109/ICEPT-HDP.2012.6474810
Filename
6474810
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