• DocumentCode
    3506542
  • Title

    Fabrication of small CNT emitters for high resolution X-ray source

  • Author

    Eom, Youngju ; Lee, Suwoong ; Won, Haena ; Kang, Jungsu ; Jnag, Jin ; Park, K.C.

  • Author_Institution
    Dept. of Inf. Display, Kyung Hee Univ., Seoul, South Korea
  • fYear
    2012
  • fDate
    9-13 July 2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We studied the fabrication of small area CNT emitters using resist-assisted patterning (RAP) process. CNT emitters grown on silicon substrate achieve higher emission current over 40 mA in the dimension of 7.8 × 10-2 cm2 with current density over 500 mA/cm2. However, with small area (200 × 500 μm2 elliptical shape) CNT emitters, we can achieve the most highest emission current density of 10 A/cm2 and 8 mA emission current.
  • Keywords
    X-ray imaging; carbon nanotubes; current density; nanofabrication; nanopatterning; C; CNT emitter fabrication; RAP process; Si; current density; high resolution X-ray source; resist-assisted patterning process; silicon substrate; Carbon nanotubes; Current density; Electron emission; Fabrication; Scanning electron microscopy; Silicon; Substrates; CNT; RAP; high resolution; x-ray source;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Nanoelectronics Conference (IVNC), 2012 25th International
  • Conference_Location
    Jeju
  • ISSN
    pending
  • Print_ISBN
    978-1-4673-1983-6
  • Electronic_ISBN
    pending
  • Type

    conf

  • DOI
    10.1109/IVNC.2012.6316990
  • Filename
    6316990
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3506542