• DocumentCode
    3506637
  • Title

    A complementary bipolar technology for low cost and high performance mixed analog/digital applications

  • Author

    Miwa, Hiroyuki ; Ammo, Hiroaki ; Ejiri, Hirokazu ; Kanematsu, Shigeru ; Gomi, Takayuki

  • Author_Institution
    Bipolar/CCD LSI Div., Sony Corp., Kanagawa, Japan
  • fYear
    1996
  • fDate
    29 Sep-1 Oct 1996
  • Firstpage
    185
  • Lastpage
    188
  • Abstract
    A complementary bipolar technology for low cost and high performance mixed analog/digital applications is presented. The technology features 30 GHz fT npn, 12 GHz fT high β npn, and 4 GHz fT pnp transistors. Numerous additional devices such as I2L, Pch JFETs, and MIS capacitances are possible on-chip to allow for a variety of applications ranging from telecommunications to consumer products
  • Keywords
    bipolar integrated circuits; integrated circuit technology; mixed analogue-digital integrated circuits; 12 GHz; 30 GHz; 4 GHz; I2L; JFET; MIS capacitors; complementary bipolar technology; low cost applications; mixed analog/digital applications; onchip devices; Boron; Capacitance; Circuits; Costs; Epitaxial layers; Fabrication; JFETs; Silicon; Stress; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting, 1996., Proceedings of the 1996
  • Conference_Location
    Minneapolis, MN
  • ISSN
    1088-9299
  • Print_ISBN
    0-7803-3516-3
  • Type

    conf

  • DOI
    10.1109/BIPOL.1996.554643
  • Filename
    554643
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3506637