Title :
Structure and properties of fluorine doped diamond-like carbon films synthesized by pulsed vacuum arc plasma deposition
Author :
Yao, Z.Q. ; Yang, P. ; Huang, N. ; Sun, H. ; Wang, J.
Author_Institution :
Lab. of Adv. Mater. Process., Southwest Jiaotong Univ., Chengdu, China
Abstract :
Summary form only given. Fluorine addition to a-C (amorphous carbon) thin films offers many advantages and a deeply understanding of the properties of a-C: F thin films is necessary for applications like biomedical implants and biosensor devices. Fluorine doped diamond-like carbon (a-C:F) films with different fluorine content were fabricated on Si wafer by pulsed vacuum arc plasma deposition. Film composition and structure were characterized by X-ray photoelectron spectroscopy (XPS) and Raman scattering spectroscopy. Surface morphology and roughness were analyzed by atomic force microscopy (AFM). Hardness and scratch resistance were measured by nano-indentation and nano-scratch, respectively. Water contact angles were measured by sessile drop method.
Keywords :
Raman spectra; X-ray photoelectron spectra; amorphous state; atomic force microscopy; biomedical materials; contact angle; diamond-like carbon; fluorine; hardness; indentation; plasma deposition; stoichiometry; surface morphology; surface roughness; AFM; C:F; Raman scattering spectroscopy; Si; Si wafer; X-ray photoelectron spectroscopy; XPS; amorphous carbon; atomic force microscopy; biomedical implants; biosensor devices; film composition; film structure; fluorine content; fluorine doped diamond-like carbon films; hardness; nanoindentation; nanoscratch; pulsed vacuum arc plasma deposition; scratch resistance; sessile drop method; surface morphology; surface roughness; water contact angle; Atomic force microscopy; Diamond-like carbon; Plasma applications; Plasma devices; Plasma measurements; Plasma properties; Raman scattering; Spectroscopy; Thin film devices; Vacuum arcs;
Conference_Titel :
Plasma Science, 2004. ICOPS 2004. IEEE Conference Record - Abstracts. The 31st IEEE International Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-8334-6
DOI :
10.1109/PLASMA.2004.1339976
