• DocumentCode
    3507015
  • Title

    The last development in III-V multi-junction solar cells

  • Author

    Al Naser, Q.A.H. ; Hilou, Hassan W. ; Abdulkader, Abbas F.

  • Volume
    1
  • fYear
    2009
  • fDate
    8-9 Aug. 2009
  • Firstpage
    373
  • Lastpage
    378
  • Abstract
    Multi-junction solar cells fabricated from III-V semiconductor materials exhibit high efficiencies matched by no other existing photovoltaic technology. Multi-junction solar cells are composed of 3 layers of material that have different band gaps. The top layer has the largest band gap while the bottom layer has the smallest band gap. This design allows less energetic photons to pass through the upper layer(s) and be absorbed by a lower layer, which increases the overall efficiency of the solar cell. One important design consideration is that the photocurrent generated in each layer must be the same since the layers are connected in series. In addition, the band gaps of each layer should differ by approximately equal energies so that the spectrum of incident radiation is most effectively absorbed.
  • Keywords
    III-V semiconductors; photoconductivity; solar cells; III-V semiconductor material; energetic photons; incident radiation; multijunction solar cells; photocurrent generation; Crystallization; III-V semiconductor materials; Kelvin; Photonic band gap; Photovoltaic cells; Photovoltaic systems; Short circuit currents; Solar power generation; Temperature dependence; Voltage; III-V compounds; multi-junction solar cell; photovoltaic technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computing, Communication, Control, and Management, 2009. CCCM 2009. ISECS International Colloquium on
  • Conference_Location
    Sanya
  • Print_ISBN
    978-1-4244-4247-8
  • Type

    conf

  • DOI
    10.1109/CCCM.2009.5268104
  • Filename
    5268104