Studies of a few monolayers of Cu/Brass on glass surfaces using AFM and TEM

Summary form only given. In this paper, a thick metal film (/spl sim/10 nm-1000 nm) is deposited at DC sputtering magnetron sets and the Copper film is formed by annealing at an elevated temperature. Studied of this solid-phase reaction have revealed the crucial role of material transport in the film but the underlying diffusion mechanisms still remained poorly understood. For ultra-thin Copper films deposited on Brass, the mechanisms governing this solid-phase reaction will likely to be different. In the present study, the initial stages of Cu growth on Brass and substrate were investigated. At high temperature, a complete reaction can be achieved giving rise to a perfect Cu/Brass grown film. Improvement of this upon annealing is characterized by an appreciable decrease of their full width at half maximum.