Digital pulse shape technique for charge discrimination in reversed CHIMERA silicon detectors

The capability of digital pulse shape technique to acquire data from CHIMERA detection cells (Si-CsI(Tl) telescopes) has been evidenced in our previous works. ΔE-E scatter plots to obtain charge identification for the detected reaction products and fast-slow scatter plots from the CsI(Tl) light pulses for light charged product identification have been carefully reconstructed. We have now applied this technique to the charge discrimination of the products which stop in the silicon detectors, by using large area totally depleted CHIMERA silicon detectors (300 μm thick, 5×5 cm² area) in reverse mount. In preliminary tests full charge identification for the reaction products up to Z=11 have been obtained for products both crossing the silicon detector (ΔE-E technique) and stopping in it, using a 21.1 MeV/u ²⁰Ne beam at the LNS superconducting cyclotron in Catania. The quality of the obtained results clearly indicates that the digital signal processing approach is able to give excellent results in this application, too.