Introducing a 1200V vertical merged IGBT and Power MOSFET: The HUBFET

Author

Donnellan, B.T. ; Mawby, P.A. ; Rahimo, M. ; Storasta, L.

Author_Institution

Sch. of Eng., Univ. of Warwick, Coventry, UK

fYear

2012

fDate

5-9 Feb. 2012

Firstpage

152

Lastpage

156

Abstract

This paper introduces a merged vertical IGBT and Power MOSFET dubbed the HUBFET (Hybrid Unipolar Bipolar Field Effect Transistor). The HUBFET exhibits characteristics of each of the merged devices under differing conditions hence it is both Unipolar and Bipolar in operation. The prototype device is rated to 1200V and is operated in the same way as a conventional IGBT or Power MOSFET. It conducts up to 1 A.cm^-2 in unipolar mode in the on-state (for VDS <; 1 V) and up to 200 A.cm^-2 in bipolar mode (for VDS >; 1 V). The device also features a reverse conducting PiN diode, the same as that seen in a Power MOSFET. Presented here are simulated and measured on-state characteristics and measured inductive turn-off performance.

Keywords

insulated gate bipolar transistors; p-i-n diodes; power MOSFET; HUBFET; PIN diodes; hybrid unipolar bipolar field effect transistor; inductive turn-off performance measurement; power MOSFET; vertical merged IGBT; voltage 1200 V; Current density; Insulated gate bipolar transistors; Logic gates; Power MOSFET; Power semiconductor devices; Semiconductor process modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Applied Power Electronics Conference and Exposition (APEC), 2012 Twenty-Seventh Annual IEEE

Conference_Location

Orlando, FL

Print_ISBN

978-1-4577-1215-9

Electronic_ISBN

978-1-4577-1214-2

Type

conf

DOI

10.1109/APEC.2012.6165812

Filename

6165812