DocumentCode
3507703
Title
Quasi-monolithic GaAs/LiNbO3-hybrids for acoustoelectric applications
Author
Rotter, Markus ; Wixforth, Achim ; Kotthaus, Jörg P. ; Ruile, Werner ; Bernklau, Daniela ; Riechert, Henning
Author_Institution
Sektion Phys., Munchen Univ., Germany
Volume
1
fYear
1997
fDate
5-8 Oct 1997
Firstpage
201
Abstract
The combination of the electronic properties of a semiconductor heterojunction and the acoustic properties of a piezoelectric material yields very promising surface acoustic wave (SAW) hybrid systems. Quasi-monolithical integration of a thin GaAs/InGaAs/AlGaAs-quantum well structure on a LiNbO3 SAW device is achieved using the epitaxial lift-off (ELO) technique. The active semiconductor layer system is removed from its substrate and transferred onto the LiNbO3. The conductivity of the two dimensional electron system in the quantum well, which can be controlled via field effect, modifies the velocity of the surface acoustic waves. Due to the high electromechanical coupling coefficient of LiNbO3 a change of the electrical boundary conditions produces a large phase shift. This leads to a new class of voltage tunable single-chip SAW devices, e,g., voltage controlled oscillators and tunable SAW delay lines
Keywords
III-V semiconductors; acoustoelectric devices; gallium arsenide; lithium compounds; piezoelectric materials; surface acoustic wave devices; voltage-controlled oscillators; GaAs-InGaAs-AlGaAs; GaAs-LiNbO3; acoustoelectric applications; active semiconductor layer; conductivity; electrical boundary conditions; electromechanical coupling coefficient; epitaxial lift-off; phase shift; piezoelectric material; quantum well; quasi-monolithic GaAs/LiNbO3-hybrids; semiconductor heterojunction; surface acoustic wave; tunable SAW delay lines; voltage controlled oscillators; voltage tunable single-chip SAW devices; Acoustic devices; Acoustic waves; Gallium arsenide; Heterojunctions; Indium gallium arsenide; Piezoelectric materials; Substrates; Surface acoustic wave devices; Surface acoustic waves; Voltage-controlled oscillators;
fLanguage
English
Publisher
ieee
Conference_Titel
Ultrasonics Symposium, 1997. Proceedings., 1997 IEEE
Conference_Location
Toronto, Ont.
ISSN
1051-0117
Print_ISBN
0-7803-4153-8
Type
conf
DOI
10.1109/ULTSYM.1997.663010
Filename
663010
Link To Document