Research on 3300V IGBTs´ switching characteristics and design the gate drive circuit

Author

Huang, Jun ; Wang, Yue ; Lei, Jingyu ; Li, Ming ; Lei, Wanjun

Author_Institution

Sch. of Electr. Eng., Xi´´an Jiaotong Univ., Xi´´an, China

fYear

2012

fDate

5-9 Feb. 2012

Firstpage

157

Lastpage

161

Abstract

In this work, 3300V IGBT switching characteristics are analyzed. Based on the experimental results, influences of the gate resistor and the external capacitor connected between the gate and emitter are studied. How the DC voltage and load current affect the switching transients is also analyzed. Besides, the gate drive circuit for 3300V IGBTs is designed. To improve the switching transient, a novel circuit of a transient voltage suppressor (TVS) with a capacitor is proposed and applied while experimental results show that the circuit has a good performance. Furthermore, the short-circuit test is done to verify the short-circuit protection of the gate drive.

Keywords

insulated gate bipolar transistors; power semiconductor devices; short-circuit currents; switching transients; DC voltage; IGBT switching characteristics; external capacitor; gate drive circuit; gate resistor; load current; short-circuit protection; switching transients; transient voltage suppressor; voltage 3300 V; Capacitors; Insulated gate bipolar transistors; Logic gates; Resistors; Switches; Switching circuits; Transient analysis; 3300V IGBT; Gate drive circuit; Short-circuit protection; Switching characteristic; Switching transient;

fLanguage

English

Publisher

ieee

Conference_Titel

Applied Power Electronics Conference and Exposition (APEC), 2012 Twenty-Seventh Annual IEEE

Conference_Location

Orlando, FL

Print_ISBN

978-1-4577-1215-9

Electronic_ISBN

978-1-4577-1214-2

Type

conf

DOI

10.1109/APEC.2012.6165813

Filename

6165813