DocumentCode
3507863
Title
The role of bipolar structures in a power MOS process
Author
Marshall, Andrew ; Teggatz, Ross
Author_Institution
Texas Instrum. Inc., USA
fYear
1996
fDate
29 Sep-1 Oct 1996
Firstpage
208
Lastpage
211
Abstract
Modern power IC processes usually optimize DMOS outputs, with little emphasis on bipolar structures, for wafer cost reasons. We describe the role of bipolar structures in a high efficiency power IC process, and design techniques to allow use of non-optimized bipolar devices
Keywords
MOS integrated circuits; current limiters; electrostatic discharge; integrated circuit design; power integrated circuits; protection; DMOS outputs; ESD structures; bipolar structures; current limiting circuits; design techniques; nonoptimized bipolar devices; power MOS process; Automotive engineering; Circuit simulation; Current supplies; MOS devices; Photonic band gap; Resistors; Switches; Temperature sensors; Thermal resistance; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting, 1996., Proceedings of the 1996
Conference_Location
Minneapolis, MN
ISSN
1088-9299
Print_ISBN
0-7803-3516-3
Type
conf
DOI
10.1109/BIPOL.1996.554649
Filename
554649
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